FIELD: physics.
SUBSTANCE: method involves steps of simultaneously forming an electrode (41), a TFT gate (40) and a bottom layer (51) of a marking area (50), simultaneously forming the insulating film (42) of the TFT gate (40) and a protective insulating film (52) which covers the bottom layer (51), carrying out different film deposition processes and pattern deposition processes. The bottom layer (51) is covered by the protective insulating film (52), leaving the main surface of the bottom layer (51) unprotected except its periphery, by removing at least part of the protective insulating film (52). A pixel electrode (46) and a top layer (56) of the marking area (50), which covers the main surface of the bottom layer (51) in the part which is not covered by the protective insulating film (52), are simultaneously formed, and marking is carried out by making a through-hole (58) by exposing the marking area (50) using a laser beam (100).
EFFECT: protecting the marking area from corrosion during production.
7 cl, 17 dwg
