METHOD OF PRODUCING DIAMONDS WITH SEMICONDUCTOR PROPERTIES Russian patent published in 2013 - IPC C30B31/06 C30B29/04 C01B31/06 

Abstract RU 2484189 C2

FIELD: chemistry.

SUBSTANCE: method involves decomposition of solid carbonyl compounds of platinum metals in a gaseous medium at high temperature in a sealed container to form diamonds and doping said diamonds with boron at temperature of 150°C-500°C for 2-5 hours in a gaseous medium which contains carbon monoxide CO and diborane B2H6 with weight ratio of boron to carbon in the gaseous mixture of 1:100-1000.

EFFECT: obtaining high quality diamond monocrystals with semiconductor properties.

1 tbl, 5 ex

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RU 2 484 189 C2

Authors

Fedoseev Igor' Vladimirovich

Loginov Boris Mikhajlovich

Loginova Marija Borisovna

Maramygina Evgenija Igorevna

Dates

2013-06-10Published

2011-08-24Filed