METHOD FOR CREATING DOPED DELTA-LAYERS IN CVD DIAMOND Russian patent published in 2017 - IPC C23C16/27 C23C16/30 C23C16/455 

FIELD: physics.

SUBSTANCE: diamond substrate is placed in a CVD reactor. First, a layer of undoped CVD diamond is deposited on the substrate in a stream of a gas mixture containing H₂+CH₄, then a dopant is introduced into the flow of the said gas mixture to deposit the doped diamond delta-layer over the undoped CVD diamond layer, then the gas mixture, not containing carbon and the said dopant, is formed in the reaction chamber of the CVD reactor for a time exceeding the time of the said dopant, with the getter of the said dopant, then a gas mixture stream containing carbon is formed. All streams of the said gas mixtures are maintained laminar and vortex-free, not creating stagnant zones, through the reaction chamber of the CVD reactor. In a particular embodiment of the invention, boron, nitrogen or phosphorus is used as a dopant. When a layer of undoped CVD diamond is deposited, a boron getter material, for example sulfur, is added to the said gas mixture. In the reaction chamber, in the formation of the said gas mixture without carbon and the dopant, a boron getter is used as the getter. The said gas mixture contains H₂ and sulfur or oxygen, and when forming the flow of the gas mixture containing carbon, a gas mixture containing H₂₊CH₄ is used. In the reaction chamber, in the formation of the said gas mixture without carbon and the dopant, a boron getter is used as the getter. The said gas mixture contains _H2 and sulfur or oxygen, and when forming the flow of the gas mixture containing carbon, a gas mixture containing H₂+CH₄ and a boron getter that is sulfur or oxygen. In a CVD diamond, more than one delta-layer can be deposited.

EFFECT: creating a thin layer of diamond with an alloying impurity in the undoped CVD diamond.

8 cl, 2 ex