METHOD FOR STABILISATION OF ELECTRIC PARAMETERS OF SEMICONDUCTOR DEVICES SEALED IN PLASTIC Russian patent published in 2013 - IPC H01L21/50 

FIELD: electrical engineering.

SUBSTANCE: method for stabilisation of electric parameters of semiconductor devices includes mounting a semiconductor crystal with manufactured structure on the lead frame, splicing of wire outputs from the crystal onto the device external outputs, the crystal sealing into a plastic body, the ready semiconductor frame die-cutting from the frame as well as performance of such operations as ageing, thermocycling, burn-in testing and electric parameters measurement. Ready semiconductor devices die-cut from the frame are treated with an extracting substance containing particles with electric charge opposite to that of the ionised particles of the admixtures contaminating the plastic body.

EFFECT: invention enables exclusion of electric parameters drift due to the electric charge of the ionised particles of the admixtures contaminating the plastic body.

1 dwg