METHOD OF MAKING HOUSING BASED ON CHIP DIMENSIONS Russian patent published in 2011 - IPC H01L23/02 

FIELD: physics.

SUBSTANCE: invention relates to microelectronics. In the method of making a housing based on chip dimensions, involving joining the front side of the initial silicon plate, on which a chip is formed, with another silicon or glass plate - cover, thinning the initial plate, forming metal-coated contact pads on the reverse side, having a low-resistance electrical connection with the corresponding contact pads of the microchip, forming lead fingers of the microchip on the base of the contact pads on the reverse side, division into separate housing crystals, the low-resistance electrical connection between the contact pads on the front and reverse sides of the initial silicon plate is formed using through low-resistance channels in the initial silicon plate before making microchip through local etching of grooves on the reverse side of the initial silicon plate at a depth several times greater than the thickness of active structures of the future microchip, thermal oxidation of the reverse side of the initial plate and walls of the etched grooves before creating the required thickness of the insulating silicon dioxide, filling the grooves with heavily doped polycrystalline silicon, after which a support silicon plate is attached to the planarised reverse side of the initial silicon plate, the front side of the initial silicon plate is then ground off until polysilicon regions of local through grooves appear and the microchip is formed on that surface, a silicon or glass plate - cover is then attached thereto on the entire area of the front surface, the support plate is removed and lead fingers of the microchip are formed on the opened reverse side of the initial silicon plate at points where local regions of polysilicon come out.

EFFECT: invention provides high yield, low material consumption and cost of the housing process, high reliability and good technical characteristics.

5 cl, 11 dwg