METHOD TO MONITOR LIFE TIME OF MINORITY CHARGE CARRIER IN SILICON BARS Russian patent published in 2013 - IPC H01L21/66 

FIELD: measurement equipment.

SUBSTANCE: in the method to monitor life time of minority charge carriers in silicon bars, including heating of an object, illumination of an object with a pulse exciting beam L₁ (wave length λ₁=1.15hr 1.28 mcm) and a probing beam L₂ (wave length λ₁<λ₂≤6.0 mcm), crossing of beams L₁ and L₂, inside the object, registration of the beam L₂ that passed through the object, measurement of time dependence of intensity of the beam L₂ that passed through the object with subsequent determination of life time of minority charge carriers for a coordinate of a crossing point of beams L₁ and L₂, scanning of the object volume with the specified area of crossing and detection of life time of minority charge carriers for scanned areas, illumination of the object with the beam L₁ is carried out at the side of the lateral surface of the object, besides, illumination is carried out via a focusing lens, the beam L₁ is focused in the object volume, and scanning of the object volume is carried out with the area of crossing of the beam L₂ with the focus of the beam L₁.

EFFECT: increased accuracy and increased efficiency of the method to measure life time of minority charge carriers in process of non-destructive layerwise survey of its distribution in silicon bars.

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