METHOD TO DETECT STRUCTURAL DEFECTS IN SILICON Russian patent published in 2013 - IPC H01L21/66 G01N21/88 

FIELD: measurement equipment.

SUBSTANCE: method includes radiation of an object in n-points with continuous probing IR-radiation L₁ with wave length λ₁≤5.0 mcm, registration of intensity I_n of radiation L₁ that has passed through the object and mathematical processing of registration results. At the same time the object is additionally radiated with pulse IR-radiation L₂, which crosses the radiation L₁ with wave length λ₂=1.0÷1.3 mcm, pulse duration Δτ₂=0.8÷1.0 ms and pulse repetition rate ω₂=0.6÷1.0 mcs, registration of intensity I_n is carried out during the period between pulses of radiation L₂. Visualisation of structural defects distribution in the object volume is carried out according to the ratio I_n/I_max, where I_max - maximum of the recorded values I_n.

EFFECT: direct visualisation of structural defects distribution in silicon volume.

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