MEASUREMENT METHOD OF LIFE CYCLE OF MINOR CHARGE CARRIERS IN SILICON Russian patent published in 2013 - IPC H01L21/66 

FIELD: measurement equipment.

SUBSTANCE: in the measurement method of life cycle of minor charge carriers in silicon, which involves heating of a silicon ingot to the temperature of not less than 80°C, lighting of the ingot end with pulse exciting beam L₁ with wave length λ₁=1.15+1.28 mcm and lighting of side surface of the ingot with sounding beam L₂ with wave length λ₁<λ₂≤6.0 mcm, crossing of beams L₁ and L₂ inside the ingot, recording of beam L₂ that passed through the ingot, measurement of time dependence of intensity of beam L₂ that passed through the ingot with further determination of life cycle of minor charge carriers for coordinate of a cross point of beams L₁ and L₂ and scanning of volume of the ingot with the above intersection area and determination of life time of minor charge carriers for scanned areas. Lighting of the ingot with beam L₁ is performed through a flat focusing lens, a flat focus of beam L₁ is located in the intersection plane of beams L₂, and scanning of the ingot volume is performed with the intersection area of beams L₂ with focus of beam L₁.

EFFECT: increasing productivity of the measurement method of life cycle of minor charge carriers during non-destructive layer-by-layer investigation of its distribution in silicon ingots.

2 cl, 1 dwg