FIELD: electrical engineering.
SUBSTANCE: semiconductor device includes thin-film diode and protection circuit with protective diode. Thin-film diode includes semiconductor layer with the first, second zones and channel zone, gate electrode, the first electrode connected to the first zone and gate electrode and the second electrode connected to the second zone. When conductivity type of thin-film diode is n-type then anode electrode of the protective diode is connected to the line which is connected either to gate electrode or to the first electrode of thin-film diode. When conductivity type of thin-film diode is P-type then cathodic electrode of the protective diode is connected to the line which is connected either to gate electrode or to the first electrode of thin-film diode. Protective circuit does not include other diodes which are connected to the line so that current direction is opposite to the protective diode.
EFFECT: deterioration of thin-film diode properties can be decreased when size of the circuit is minimised.
12 cl, 37 dwg
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