FIELD: electricity.
SUBSTANCE: method of manufacturing of an enhancement/depletion (E/D) inverter having a number of thin-film transistors on the same substrate with channel layers consisting of an oxide semiconductor containing at least one element selected from In, Ga and Zn, involves the stages to form a first transistor and a second transistor; a channel layer thickness of the first and second transistors is mutually different; at least one of the channel layers of the first and second transistors are thermally treated.
EFFECT: expansion of the facilities allowing to manufacturer an inverter with oxide semiconductor thin-film transistors of various threshold voltages, simplified method of manufacturing of the inverter with such characteristics, cost reduction.
13 cl, 18 dwg
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