FIELD: measurement equipment.
SUBSTANCE: invention relates to optical methods of metal and semiconductor surface control in terahertz range of the spectrum and may find application in technological processes for control of thickness and homogeneity of thin-layer coatings of metallised items and semiconductor substrates, in the methods for detection of irregularities on/of conducting surface, in infrared (IR) refractometry of metals for determination of their dielectric permeability, in IR sensor devices and inspection technology. The method includes measurement of intensity of the field of surface plasmons (SP) in the plane of drop of radiation generating a bundle of SP rays, and calculation of the value 5 by results of measurements, for this purpose the SPs are converted into a volume wave on the front line, which belongs to the selected plane of the bundle cross section, the wave is focused into a line lying in the drop plane, and distribution of radiation intensity is measured on this line, and the angle of inclination of wave rays to the surface, guiding the SPs.
EFFECT: invention makes it possible to reduce time of measurements.
2 dwg
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Authors
Dates
2013-08-27—Published
2012-03-05—Filed