SOLID-STATE IMAGE CAPTURING DEVICE AND METHOD FOR PRODUCTION THEREOF Russian patent published in 2014 - IPC H01L27/146 

FIELD: physics, optics.

SUBSTANCE: invention relates to image capturing devices. The solid-state image capturing device includes a plurality of pixels, each having a photoelectric conversion area configured to generate charges in accordance with incident light, a charge retention area configured to include a first semiconductor region with a first conductivity type, and a transfer area configured to include a transfer gate electrode which controls potential between the charge retention area and a reading unit. The charge retention area includes a control electrode. A second semiconductor region with a second conductivity type lies on the surface of the semiconductor region between the control electrode and the transfer gate electrode. A third semiconductor region with a first conductivity type lies under the second semiconductor region. The third semiconductor region lies deeper than the first semiconductor region.

EFFECT: invention increases efficiency of charge transfer from the charge retention area to a floating diffusion region.

8 cl, 7 dwg