FIELD: information technologies.
SUBSTANCE: solid-state image generation device includes multiple pixels, every of which includes a photoelectric converting part and a transmitting part to transfer signal electrons from the photoelectric converting part, besides, multiple photoelectric parts are generated in a pocket with conductivity of the first type, formed on a semiconductor substrate; the first impurity region with conductivity of the second type is placed between adjacent photoelectric converting parts; the second impurity region with conductivity of the first type, having impurity concentration higher than the pocket, is placed between the first impurity region and each of the photoelectric converting parts; and the third impurity region with conductivity of the first type, having impurity concentration higher than the pocket, and reducing from the semiconductor substrate towards the device surface, is placed between the semiconductor substrate and the first impurity region.
EFFECT: provision of the solid-state image generation device capable of image blur and colour blending suppression.
10 cl, 9 dwg
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