METHOD FOR OBTAINING LARGE HOMOGENEOUS CRYSTALS OF SILICON CARBIDE USING DISTILLATION AND CONDENSATION PROCESSES Russian patent published in 2013 - IPC C30B23/00 C30B29/36 C01B31/36 

FIELD: metallurgy.

SUBSTANCE: method for obtaining monolithic crystals of silicon carbide involves the following: i) placing of mixture containing chips of polycrystalline silicon and carbon powder onto the bottom of a cylindrical reaction chamber having a cover plate; ii) sealing of cylindrical reaction chamber; iii) placing of cylindrical reaction chamber into a vacuum furnace; iv) pumping of air out of the furnace; v) filling of the furnace with mixture of gases that are essentially inert gases to approximately atmospheric pressure; vi) heating of cylindrical reaction chamber in the furnace to the temperature of 1975 to 2500°C; vii) pressure drop in cylindrical reaction chamber to less than 50 torr, but not less than 0.05 torr; and viii) implementation of sublimation and condensation of vapours on inner part of the cover plate of cylindrical reaction chamber.

EFFECT: invention allows obtaining large crystals of silicon carbide and creating renewable method for growth of crystals with high purity degree.

16 cl, 2 ex, 2 tbl