SUBLIMATION METHOD FOR GROWING SILICON CARBIDE MONOCRYSTALS AND SILICON CARBIDE SOURCE INVOLVED Russian patent published in 1997 - IPC

FIELD: crystal growing. SUBSTANCE: invention relates to a method of growing silicon carbide monocrystals including providing growth zone by way of parallel arrangement, one opposite the other, of silicon carbide source evaporating surface and growth surface of at least one inoculating monocrystal of required type, creating reduced pressure in growth zone and operation temperature field with axial gradient in direction from inoculating monocrystal toward silicon carbide source ensuring vaporization of source and crystallization of silicon carbide from vapor phase on growth surface of inoculating monocrystal. Invention is distinguished by that growth zone is sealed until operation temperatures therein are attained and the process is carried out in presence of solid solution of tantalum and silicon carbides in tantalum and their chemical compounds in growth zone. In this case, silicon carbide source and inoculating monocrystal are placed into sealable container, material of inner surface of which is above said solid solution and container volume is confined by plane to fix inoculating monocrystal and by perimeter of growth zone silicon carbide source. As inoculating monocrystal, silicon carbide monocrystal of 4H type may be used while tin vapor is additionally introduced into growth zone. As material of silicon carbide source, silicon carbide ceramics is used prepared by means of caking powder at temperature providing partial resublimation of silicon carbide. Invention is intended to be applied to manufacturing semiconductor devices. EFFECT: facilitated procedure. 5 cl, 2 dwg