MONOCRYSTALLINE SIC AND METHOD OF PREPARATION THEREOF Russian patent published in 2000 - IPC

FIELD: semiconductor engineering. SUBSTANCE: invention relates to monocrystalline SiC that can be used as luminodiode-supporting plate, x- ray optical device, high-temperature electronic element, power device, etc. Two complexes M, in each of which polycrystalline film 2 beta-SiC (or alpha-SiC) is grown on the surface of monocrystalline alpha-SiC of substrate 1 by thermochemical precipitation, and surface 2a of polycrystalline film 2 is polished such that evenness had roughness of surface with mean square deviation 200 or less, advantageously 100 to 50 , are subjected to heat treatment under condition when complexes are firmly attached to each other through polished surfaces 2a' at temperature at least 2000 C in saturated SiC vapors' atmosphere. As a result, polycrystalline films 2 of complexes M recrystallize with growth of monocrystal, which integrates with monocrystalline alpha-SiC of substrate 1. Larger-size optionally high-quality monocrystal SiC devoid of impurities, microtubular defects, etc. can thereby by prepared with high productivity. EFFECT: improved quality of monocrystalline SiC. 9 cl, 4 dwg