FIELD: semiconductor technology. SUBSTANCE: reaction chamber 2 is surrounded by gas-impermeable wall 20 which inner side 21 facing reaction chamber is made of silicon carbide manufactured by CVD method. At least part of silicon carbide of wall 20 is sublimated and grown on nucleus 3 of crystal in the capacity of monocrystal 4 of silicon carbide. EFFECT: production of high-quality monocrystals of silicon carbide. 11 cl, 10 dwg
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