METHOD OF PRODUCING MONOCRYSTALLINE SiC Russian patent published in 2011 - IPC C30B23/00 C30B29/36 

FIELD: chemistry.

SUBSTANCE: method of producing monocrystalline SiC involves sublimation of a SiC source placed in a crucible onto a substrate of an inoculating SiC monocrystal, and also placed in a crucible on a graphite holder using a transition layer. That layer contains a mechanical mixture of carbon and silicon carbide powder in form of any of their combinations, with or without addition of binder. The layer is placed between the inoculating crystal and the holder and the surface of the inoculating crystal and the inoculum holder are treated with an adhesive. The transition layer can consist of several sublayers of different composition deposited successively. When depositing the transition layer, a suspension of powdered silicon carbide and carbon in form of graphite or soot is used, wherein the dispersion medium used to obtain the suspension is isopropyl or vinyl or ethyl alcohol.

EFFECT: reduced mechanical stress in the inoculum and improved quality of the desired product.

3 dwg, 1 tbl