FIELD: chemistry.
SUBSTANCE: invention relates to chemistry. The apparatus 1 for producing trichlorosilane includes a decomposing furnace 2, a heating element 8 which heats the inside of the decomposing furnace 2, a tube 3 for feeding polychlorosilane and hydrogen chloride into the inner bottom part of the decomposing furnace 2, a tube 4 for removing reaction gas from the top part of the reaction chamber 13, located between the outer peripheral surface of the tube 3 for feeding raw material and the inner peripheral surface of the decomposing furnace 2, a fin 14, which guides the fluid mixture of the polychlorosilane and hydrogen chloride fed to the bottom end of the of the opening of the tube 3 for feeding raw material in order to mix and feed the raw material up the reaction chamber.
EFFECT: invention enables to obtain trichlorosilane from polychlorosilane which is obtained when producing polycrystalline silicon, when producing trichlorosilane or during a conversion process.
7 cl, 10 dwg
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0 |
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SU180594A1 |
Authors
Dates
2013-10-27—Published
2009-08-03—Filed