METHOD OF PRODUCING TRICHLOROSILANE AND SILICON FOR USE IN PRODUCTION OF TRICHLOROSILANE Russian patent published in 2014 - IPC C01B33/107 

Abstract RU 2529224 C1

FIELD: chemistry.

SUBSTANCE: method includes reacting silicon with gaseous HCl at temperature between 250°C and 1100°C and absolute pressure of 0.5-30 atm. The process can be carried out in a fluidised bed reactor, a stirred bed reactor or a solid bed reactor. The silicon fed for reaction contains 40-10000 ppm barium by weight and optionally 40-10000 ppm copper by weight.

EFFECT: high selectivity of the process of producing trichlorosilane.

14 cl, 4 dwg, 2 tbl, 4 ex

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RU 2 529 224 C1

Authors

Khoehl' Jan-Otto

Kh'Enli Khenning

Rong Kharri Morten

Reeh Torb'Ern

B'Erdal' Jostejn

Dates

2014-09-27Published

2011-07-06Filed