FIELD: radio engineering, communication.
SUBSTANCE: method is realised via summation of current of two control channels, one of which forms a component proportional to current of the reference transistor, and the other forms a component dependent on base-emitter voltage difference of the output and reference transistors. To this end, the device for stabilising collector current of the output heterostructure bipolar transistor further includes an emitter follower, a second reference transistor and two current distribution resistors.
EFFECT: reduced fluctuation of collector current of the output transistor during change in operating temperature of the amplifier, load resistance and supply voltage.
2 cl, 1 dwg
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