NON-RESISTIVE GALLIUM ARSENIDE OPERATIONAL AMPLIFIER WITH LOW LEVEL OF SYSTEMATIC COMPONENT OF ZERO OFFSET VOLTAGE Russian patent published in 2024 - IPC H03F3/45 

FIELD: radio engineering.

SUBSTANCE: disclosed is an operational amplifier, in which first (13) additional reference current source is connected between the collector of first (4) input bipolar transistor and second (11) power supply bus, between collector of second (5) input bipolar transistor and second (11) power supply bus, second (14) additional source of reference current is connected, combined emitters of first (8) and second (9) bipolar transistors of the current mirror are connected to the emitter of output bipolar transistor (10), wherein first (6) and second (12) current-stabilizing two-terminal circuits, first (13) and second (14) additional reference current sources are made on gallium arsenide field-effect transistors with a control p-n junction, and the numerical values of currents of first (6) current-stabilizing two-terminal circuit, first (13) and second (14) additional sources of reference current are approximately 2 times less than the current of second (12) current-stabilizing two-terminal circuit.

EFFECT: design of an operational amplifier circuit with a low level of a systematic component of zero offset voltage.

1 cl, 11 dwg