METHOD OF CRYSTALLINE SILICON SEPARATION BY THERMOELASTIC STRAINS Russian patent published in 2013 - IPC B23K26/38 B23K31/10 C03B33/02 

FIELD: process engineering.

SUBSTANCE: invention relates to laser cutting of anisotropic materials and can be used in electronics engineering and other industries that required precise machining of crystalline materials. Proposed method comprises selection of cutting direction along crystalline silicon crystal-lattice [crystallographic] orientation, making the notch along cutting line, laser heating of cutting line to temperature not exceeding that of thermoelastic strain relaxation and local cooling of heating zone by displacement of heating and cooling zones over processed surface. Young modulus is defined subject to cutting direction relative to said crystal-lattice [crystallographic] orientation. Heating intensity is measured by varying relative displacement of laser radiation and material and/or laser radiation power in proportion with Young modulus perpendicular to separation plane.

EFFECT: efficient and reliable cutting.

2 cl, 1 dwg