DEVICE FOR INTENSIVE COOLING POWER SEMICONDUCTOR DEVICES Russian patent published in 2013 - IPC H01L23/34 

Abstract RU 2498451 C1

FIELD: electricity.

SUBSTANCE: in device for intensive cooling of power semiconductor devices that includes a capacitor made of an extruded profile section with outer finning and internal condensation groove connected to evaporator completely filled in with liquid intermediate heat medium, the evaporator is connected rigidly by antifreeze 65; in the evaporator there is boiling intensifier made in the form of vertical ribs of highly heat conducting metal matrix composite AlSiC. Dimensions of boiling intensifier made in the form of vertical ribs are defined by the base diameter of a power semiconductor device. Perfluorotrimethylamine is used as a liquid intermediate heat medium.

EFFECT: invention allows improving efficiency of a cooling device, improving its manufacturability, reducing material consumption, differentiating the design of the device depending on levels of capabilities of heat losses of cooled power semiconductor devices.

7 cl, 1 dwg

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RU 2 498 451 C1

Authors

Nishchev Konstantin Nikolaevich

Kalikanov Valerij Mikhajlovich

Fomin Jurij Andreevich

Judin Vjacheslav Aleksandrovich

Panfilov Stepan Aleksandrovich

Dates

2013-11-10Published

2012-06-19Filed