FIELD: physics.
SUBSTANCE: invention relates to methods of dissipating heat in multilayer 3D integrated circuits (IC). By filling the air gap between layers of the multilayer IC with a heat-conducting material, heat generated in one or more regions inside one of the layers can be dissipated in the transverse direction. Transverse dissipation of heat can take place along the entire length of the layer and the heat-conducting material can be electrically insulating. Through-connections through silicon can be constructed in defined regions to facilitate heat dissipation from problematic thermal regions.
EFFECT: improved heat dissipation in multilayer 3D integrated circuits.
7 cl, 4 dwg
