3-D INTEGRATED CIRCUIT LATERAL HEAT DISSIPATION Russian patent published in 2012 - IPC H01L25/65 H01L23/36 

Abstract RU 2459315 C1

FIELD: physics.

SUBSTANCE: three-dimensional integrated circuit device has a first chip which is laid on a second chip to form a layered structure, each of the chips having elements constructed therein, and the chips are connected to each other by a plurality of interlayer connections which form space between the first and second chips. The device also has a through-hole through the substrate, filled with heat-conducting material, which is located in the first chip. The second chip has a heat-conducting layer, wherein the heat-conducting layer provides a physical interconnection between the second chip and the through-hole through the substrate located in the first chip.

EFFECT: improved removal of heat from problem areas of a three-dimensional integrated circuit device.

14 cl, 4 dwg

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RU 2 459 315 C1

Authors

Kaskun Kennet

Gu Shitsjun'

Novak Mehtt'Ju M.

Dates

2012-08-20Published

2009-04-27Filed