INTERPOSER AND METHOD OF MAKING SAME Russian patent published in 2016 - IPC H01L27/04 H01L21/70 

FIELD: manufacturing technology.

SUBSTANCE: invention relates to production of integrated microcircuits in part of interposer forming for 3D assembly of several chips in single micro-system and process of its production. Invention is aimed at reducing effect of temperature gradients and associated mechanical stresses arising in body of interposer during operation of integrated microelectronic system. For this purpose, in body of interposer around through holes (TSV) filled with conducting material to create electric connection of metallized electric wiring working side with metallized layout of interposer reverse side formed holes, one of topological dimensions considerably smaller than minimum feature size TSV.

EFFECT: formed holes for reducing effect of temperature gradients are filled with material with heat conductivity higher than that of silicon, for compensation of mechanical stresses are not filled or are filled partially with formation of cavities inside hole.

18 cl, 11 dwg