FIELD: physics.
SUBSTANCE: invention relates to magnetic sensors based on multilayer nanostructures with a magnetoresistive effect. The method according to the invention involves oxidising a silicon substrate 1, forming a dielectric layer 2, forming a magnetoresistive structure having top 3 and bottom 4 protective layers with a ferromagnetic film 5 in between, forming, from three rows of parallel magnetoresistive strips, ballast arms of a bridge circuit and a strip of the working arm of the bridge circuit by liquid etching, wherein the width of the magnetoresistive strips of the ballast arms of the bridge circuit is N times smaller than the width of the strip of the working arm, and the lengths of the magnetoresistive strips of the ballast arms and working arm of the bridge circuit are equal, depositing a first insulating layer 6, opening contact windows to strips therein, forming jumpers between the rows of magnetoresistive strips of the ballast arms of the bridge circuit by sputtering an aluminium layer 7 and subsequent plasma-chemical etching, forming a second insulating layer 8, opening transition walls to the jumpers therein, forming a planar conductor passing over the working arm of the bridge circuit by sputtering an aluminium layer 9, subsequent plasma-chemical etching and passivation with formation of a top protective layer 10.
EFFECT: invention reduces the size of the sensor, increases the sensitivity of the sensor and increases the percentage output of nondefective items.
3 cl, 2 dwg
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Authors
Dates
2014-02-10—Published
2012-10-11—Filed