METHOD TO APPLY COATING FOR PASSIVATION OF SILICON PLATES Russian patent published in 2014 - IPC C23C16/26 C23C16/458 C23C16/54 

FIELD: electricity.

SUBSTANCE: invention relates to the field of high-voltage equipment, to power semiconductor devices, and, in particular, to the method and device for single-stage double-sided application of a coating layer from an amorphous hydrogenated carbon onto the surface of the silicon plate, and also to the holder of the substrate for support of the silicon plate. A silicon plate (4) is used, containing the first large side with the first slant along the edge of the first large side and the second large side with the central section and the second slant along the edge of the second large side surrounding the central section. Besides, the second large side is opposite to the first large side, the silicon plate (4) is placed on the support (31) for the substrate of the substrate holder (3). The support (31) for the substrate is performed with the possibility to ensure contact of only the central section of the second large side of the plate (4) with the support (31) for the substrate. Then the holder of the substrate with the plate (4) is placed into a reaction chamber (8) of a plasma reactor, in which the first and second slants are simultaneously exposed to plasma (6), to produce the deposited layer (7) from the amorphous hydrogenated carbon.

EFFECT: possibility is provided for single-stage double-sided application of a passivating layer, providing for electric inactivity of a section of a semiconductor plate.

17 cl, 5 dwg