METHOD OF PRODUCING LOCALLY DOPED SILICON FILM WITH GIVEN CHARACTERISTICS FOR MICROELECTRONIC DEVICES Russian patent published in 2024 - IPC H01L21/205 H01L21/266 B82Y40/00 

FIELD: various technological processes.

SUBSTANCE: invention can be used in nanotechnology as a nanostructuring method for developing semiconductor microelectronics devices. Method is realized by growing an amorphous silicon film by plasma-chemical deposition from a gas phase by feeding a monosilane stream into a reactor at a temperature of up to 700 °C; local plasma doping of the silicon film through a photoresist or electronic resist mask according to a given pattern by feeding a boron trichloride flow into the reactor and applying a bias voltage between the sample and the plasma; followed by thermal annealing of the sample to activate the dopant at temperature of 600–1,000 °C.

EFFECT: invention enables to vary and control film characteristics in a wide range and to use this method in mass production of semiconductor microelectronic devices.

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