FIELD: semiconductor structures manufacture.
SUBSTANCE: invention relates to the manufacture of semiconductor structures and can be used in the manufacture of silicon wafers for the manufacture of power devices in microelectronics. The substance of the invention lies in the fact that in a device for deposition of ultra-thick layers of polycrystalline silicon, including a chamber 1 in which a heater 2 is located, a silicon source plate 4 is installed on the first surface 3 of the heater 2, while the substrate holder 5 is located in the chamber 1 and it includes a gas mixture supply module 18 and a gas mixture output module 19, the first screen 6 is introduced in the form of a flat element, coupled with the substrate holder 5, a second screen 7 is also introduced into it, made in the form of a ring and connected by the first end 8 with the first screen 6, and the second end 9 with the heater 2 and the silicon source plate 4, the substrate holder 5 is located inside the second screen 7, and the chamber 1 includes the quartz reactor 13, and the substrate holder 5, the first screen 6 and the second screen 7 represent the loading cell 10, coupled with the first surface 3 of the heater 2.
EFFECT: achieving controllability of the formation of semiconductor structures and, as a consequence, increasing the growth rate.
7 cl, 5 dwg
