FIELD: physics.
SUBSTANCE: structure of the photoconverter based on crystalline silicon includes: a textured polycrystalline or monocrystalline silicon plate; a passivation layer in the form of amorphous hydrogenated silicon deposited on each side of the silicon plate; p-layer; n-layer; contact current-collecting layers in the form of transparent conductive oxides; a rear current-collecting layer in the form of a metallic opaque conductive layer, wherein metal oxides of p-type and n-type are respectively used as the p-layer and n-layer, wherein n-type and p-type layers, passivation and current-collecting layers are applied by magnetron sputtering method. Zinc oxide (ZnO) or SnO2, Fe2O3, TiO2, V2O7, MnO2, CdO, or other n-type metal oxides are used as n-type metal oxide. MoO, or CoO, Cu2O, NiO, Cr2O3, or other p-type metal oxides are used as p-type metal oxide. A production line for photoconverter based on crystalline silicon, including sequential operations, such as: cleaning and texturing crystalline silicon plates; depositing a passivation layer of amorphous hydrogenated silicon on each side of the silicon plate; application of the p-layer of the photoconverter; application of the n-layer of the photoconverter; application of contact current-collecting layers of the photoconverter; application of the rear current-collecting layer; final assembly, wherein sequential magnetron sputtering of the passivation layer, p-layer in the form of the p-type metal oxide, n-layer in the form of the n-type metal oxide, and current-collecting layers is performed by magnetron sputtering. In this case, a magnetron sputtering of the silicon target in an atmosphere of silane and argon with the addition of hydrogen can be carried out.
EFFECT: invention allows to increase productivity, reduce the dimensions of the production line, eliminate the need for overturning silicon plates in the production process.
5 cl, 1 dwg
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Authors
Dates
2017-10-03—Published
2016-03-10—Filed