METHOD AND A DEVICE FOR SETTLING AT LEAST PARTIALLY OF A CRYSTALLINE SILICON LAYER ON A SUBTRATE Russian patent published in 2005 - IPC

FIELD: methods and equipment for settling at least partially of a crystalline silicon layer on a substrate.

SUBSTANCE: the invention is pertaining to a method and a device for settling at least partially a crystalline silicon layer on a substrate and may be used in various branches of industry. Generate a plasma and a substrate is subjected to action of a silicon-containing liquid medium - a source and an auxiliary liquid medium capable to etching of the non-crystalline way bound atoms of silicon. On a path of motion of the both leaky mediums to the substrate create a pressure drop. The device has a plasma chamber, a reaction chamber and a means to feed the liquid medium-source. The reaction chamber contains a holder of a substrate and is in an open communication with the plasma chamber through a passing hole. The plasma chamber is supplied with a means to feed the auxiliary liquid medium and is provided with a pumping means for making pressure drop between the plasma chamber and the holder of the substrate. As a result forms a significantly high quality crystalline silicon layer on a substrate with a rather high speed of grow even at a rather low temperature.

EFFECT: the invention ensures a rather high speed grow of a crystalline silicon layer on a substrate with a high quality even at a rather low temperature.

21 cl, 2 dwg