METHOD AND DEVICE FOR REDUCING OF SURFACE ROUGHNESS Russian patent published in 1999 - IPC

FIELD: thin-film technology. SUBSTANCE: given method and device may be used in development of roentgen and neutron optics elements. Method includes exposure of plasma surface to inert and chemically active gases which provide for surface layer etching with simultaneous polishing of surface. In this case, surface of not material itself but film made of the same or other material is subject to etching. This film is preliminarily deposited on material from gaseous phase by evaporation or dispersion of target. Device has specimen holder and plasma formation system positioned in vacuum chamber. Specimen holder is of arbitrary shape. It may be supplied with alternating-current voltage and additional direct-current bias, and it may be positioned in DC or ac magnetic field. EFFECT: reduced surface roughness. 5 cl, 3 ex, 4 dwg