METHOD AND DEVICE TO CONTROL CONDITION OF ELECTRONIC KEY Russian patent published in 2014 - IPC H02M1/08 

Abstract RU 2509403 C1

FIELD: electricity.

SUBSTANCE: in the method to control condition of an electronic key made in accordance with the technology MOSFET/IGBT of transistors, by means of sending an AC signal to a drain-source via a diode bridge from the secondary winding of the transformer, by consumption current and the shape of signal in the primary circuit of the transformer. To realise the method of control of the open-closed condition of electronic keys, a device is provided, made of two serially connected MOSFET/IGBT transistors, forming an electronic switchboard of AC current, where accordingly sources and gates of transistors are combined, drains - inlet and outlet of the switchboard, at the same time the drain-source of each transistor are connected accordingly with units of cathodes and anodes of appropriate diodes according to the bridge circuit, the remaining symmetrical points of diode bridges are connected with he outlet winding of the appropriate isolating transformer and serially with the one connected outlet of the outlet windings of transformers of limiting resistors, and also primary windings of transformers, connected to the common generator of AC voltage via appropriate current sensors.

EFFECT: improved reliability.

2 cl, 1 dwg

Similar patents RU2509403C1

Title Year Author Number
TRANSISTOR INVERTER 2016
  • Zeman Svyatoslav Konstantinovich
  • Petrovich Vitalij Petrovich
  • Chernyshev Aleksandr Yurevich
  • Chernyshev Igor Aleksandr
RU2614045C1
TRANSISTOR INVERTER 1999
  • Magazinnik G.G.
  • Magazinnik L.T.
RU2165125C1
PULSE MODULATOR 2014
  • Veselov Vladislav Viktorovich
  • Malyshev Vladimir Viktorovich
  • Popov Sergej Grigorevich
  • Zykov Aleksandr Viktorovich
RU2622862C2
DEVICE AND METHOD OF CONTROL OF HIGH-VOLTAGE SEMICONDUCTOR SWITCHING DEVICE 2019
  • Zykov Viktor Petrovich
  • Rutskoi Andrei Sergeevich
  • Moiseev Mikhail Viktorovich
RU2734322C1
TRANSISTORIZED AC VOLTAGE REGULATOR INCORPORATING DAMPING CAPACITOR 2002
  • Sidorov S.N.
RU2220494C1
POWER SWITCH CONTROL DIAGRAM BASED ON IGBT OR MOS TRANSISTORS 2023
  • Shevtsov Daniil Andreevich
  • Shishov Dmitrii Mikhailovich
  • Lukoshin Ilia Vladimirovich
  • Kovan Iurii Igorevich
  • Egoshkina Liudmila Aleksandrovna
  • Podguzova Mariia Andreevna
RU2806902C1
MULTICHANNEL SWITCHING DEVICE 0
  • Epik Ivan Ivanovich
  • Genin Adolf Ivanovich
SU792585A1
STABILISED DC VOLTAGE CONVERTER 2014
  • Gutnikov Anatolij Ivanovich
  • Anashkin Andrej Sergeevich
RU2541519C1
SECONDARY POWER SUPPLY 2015
  • Panfilov Dmitrij Ivanovich
  • Astashev Mikhail Georgievich
  • Novikov Mikhail Aleksandrovich
  • Novikov Aleksandr Albertovich
RU2601419C1
ONE-PHASED BRIDGE TRANSISTOR INVERTER 2005
  • Magazinnik Lev Teodorovich
RU2279754C1

RU 2 509 403 C1

Authors

Bazjuk Aleksandr Mikhajlovich

Volkov Vladimir Grigor'Evich

Dates

2014-03-10Published

2012-09-12Filed