METHOD OF MANUFACTURE OF SEMICONDUCTOR STRUCTURE CONTAINING A P-N JUNCTION UNDER POROUS SILICON FILM FOR IMPLEMENTATION OF A PHOTOELECTRIC CONVERTER Russian patent published in 2018 - IPC H01L31/18 

FIELD: electrical engineering.

SUBSTANCE: invention relates to the field of manufacturing semiconductor structures with a pn junction and can be used for the manufacture of solar photoelectric converters (FEC). Method for manufacturing a semiconductor structure containing a p-n junction under a porous silicon film for the implementation of a photoelectric converter is proposed. According to the invention it is proposed to grow a film of porous silicon containing in its volume an admixture of diffusant – phosphorus, on the surface of a single-crystal silicon p-type substrate by electrochemical anodic etching in an electrolyte consisting of hydrofluoric acid (HF), ethanol (C₂H₅OH) and orthophosphoric acid (H₃RO₄), after which thermal diffusion of phosphorus from a porous silicon film with a phosphorus impurity into a single-crystal silicon substrate is carried out.

EFFECT: technical result consists in creating a method for manufacturing a semiconductor structure with a pn junction under a porous silicon film that plays the role of an antireflection coating, contributing to the increase in the efficiency of the conversion of the FEC, the number of technological operations is also minimized, the labor intensity is reduced and the productivity of the FEC manufacturing process is increased, which is important in mass production conditions.

1 cl, 3 dwg