FIELD: nanotechnology.
SUBSTANCE: invention relates to nanostructures with high thermoelectric properties. The one-dimensional (1D) or two-dimensional (2D) nanostructure is proposed, which is a nanowire of silicon, prepared by the method of non-electrolytic etching or grown by the method of VLS (vapour-liquid-solid). The nanostructure has a rough surface and comprises a doped or undoped semiconductor. The variants of the method of generation of electric power using the claimed nanostructures are proposed, as well as variants of devices for thermoelectric conversion using them.
EFFECT: proposed nanostructure can be located between two electrodes, and used effectively for thermoelectric power generation or for thermoelectric cooling.
48 cl, 9 dwg, 2 ex
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