METHOD OF FORMING EPITAXIAL COPPER NANOSTRUCTURES ON SURFACE OF SEMICONDUCTOR SUBSTRATES Russian patent published in 2014 - IPC H01L21/20 B82Y40/00 

FIELD: chemistry.

SUBSTANCE: method of forming epitaxial copper nanostructures on the surface of semiconductor substrates includes formation of a monoatomic layer of copper silicide Cu₂Si on a preliminarily prepared atomically clean surface of Si(111)7×7 at a temperature of 550-600°C under conditions of superhigh vacuum, further precipitation of copper on it at a temperature of 500-550°C with efficient copper thickness from 0.4 to 2.5 nm. With efficient copper thickness from 0.4 to 0.8 nm islands of epitaxial copper nanostructures of a triangular and polygonal shape are formed, and if copper thickness is in the range from 0.8 to 2.5 nm, in addition to copper islands of the triangular and polygonal shapes ideally even copper wires are formed. The formed epitaxial copper nanostructures possess faceting, are oriented along crystallographic directions <110>Cu||<112>Si.

EFFECT: invention provides a possibility of controlled formation of epitaxial copper nanostructures with a specified shape and dimensions on the surface of semiconductor substrates.

2 cl, 6 dwg