THERMOELECTRIC MODULE, METHOD OF ITS PRODUCTION AND MODULE FOR THERMOELECTRIC CONVERSION WITH USE OF THIS MATERIAL Russian patent published in 2015 - IPC H01L35/32 H01L35/14 H01L35/34 B82B1/00 

FIELD: electricity.

SUBSTANCE: thermoelectric material contains a semiconductor substrate, a semiconductor oxide film, formed on a semiconductor substrate, and a thermoelectric layer made on the semiconductor oxide film. The semiconductor oxide film comprises the first nanohole formed in it, the thermoelectric layer has configuration providing for the possibility to lay multiple semiconductor nanopoints onto or above the first nanohole to form the structure of laid particles. At least some nanopoints from multiple semiconductor nanopoints have the second nanohole, formed in its surface, and are connected to each other by means of the second nanohole with balanced orientation of their crystals. Thermoelectric material is produced by using the stage of oxidation of the semiconductor substrate to form the semiconductor oxide film on the semiconductor substrate; formation of the first nanohole in the semiconductor oxide film, and epitaxial growth for application of multiple semiconductor nanopoints made from semiconductor material, onto the first nanohole.

EFFECT: increased coefficient of thermoelectric conversion.

12 cl, 9 dwg