FIELD: chemistry.
SUBSTANCE: invention is intended for use in plasma chemical processes during conversion of silicon tetrafluoride into monosilane for production of high-purity polycrystalline silicon in microelectronics. Power of microwave plasmatron can be increased by direct summation of power of rectangular waveguides with electromagnetic wave H01, connecting them along cylindrical discharge chamber at an angle of 90°. Explosion safety of production is improved at the same time due to complete dissociation of hydrogen in plasmatron.
EFFECT: technical result is increasing output of monosilane to 82-90 % of theoretical output during plasma-sorption conversion of SiF4 due to use in cylindrical discharge chamber of an electromagnetic wave H11.
1 cl, 2 dwg
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