METHOD OF OBTAINING HIGH-PURITY SILICON Russian patent published in 2011 - IPC C01B33/39 

FIELD: technological processes.

SUBSTANCE: invention relates to field of nonferrous metallurgy in production of high- purity silicon, used for solar batteries. Method includes processing of mixture of metallurgic silicon and quartz with silicon tetrafluoride in zone of heating of tube furnace with formation of silicon difluoride and its further decomposition into silicon and silicon tetrafluoride. Processing of mixture of metallurgic silicon and quartz with silicon tetrafluoride is carried out simultaneously with mixture stirring by rotation of horizontal tube furnace for not more than 90° in both sides relative its horizontal axis, decomposition of silicon difluoride being carried out immediately in zone of decomposition of horizontal tube furnace after mixture processing, applied is mixture metallurgic silicon and quartz with fraction less than 1 mm with weight ratio metallurgic silicon: quartz in mixture more than 1.

EFFECT: increase if high- purity silicon output due to increase of degree of silicon difluoride decomposition and process simplification.

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