FIELD: physics.
SUBSTANCE: invention relates to methods for producing monolithic joints of polycrystalline diamond rods intended for use in the manufacture of electronics, optics, and microwave devices, in particular, for the production of dielectric supports in travelling wave tubes (TWTs) using a low absorption coefficient at generation frequencies. The method of splicing the components of polycrystalline CVD diamonds in a microwave plasma is that the ends of the polycrystalline diamond (PCD) samples being connected are placed on an intermediate single crystal diamond substrate (ISCDS) on the growth face {100}, which is perpendicular to the direction of the spliced compound axis, towards to each other with a gap S not less than (0.5-5.0)⋅h, where h is a height of the PCD, while the ends of the PCD are made with bevels with an opening angle α(°)=tg(Ve.pcd.⋅τ)/(Ve.pcd/⋅τ), where τ - the total growth time of the welded joint, Ve.pcd is a speed of the oncoming growth of the layers on the PCD and on the lateral face {111} of the ISCDS, Ve.pcd is a rate of epitaxial growth of the single crystal diamond layer on the growth face {100} of the ISCDS. The monolithic compound is created by the method of simultaneous epitaxial accelerated and retarded growth of CVD layers on an intermediate single-crystal diamond substrate (ISCDS) and the spliced layers on the faces of the ISCDS and the spliced ends of the PCD perpendicular to the direction of the joint axis at the optimal distance from the base of the connected components, equal to half the opening angle of a monolithic one-piece connection α(°).
EFFECT: invention provides a saving in time and money for growing large-size blanks, replacing them with less expensive smaller billets and satisfying the requirements of cutting out the support rod elements therefrom for the travelling wave tubes that acquire the desired length after splicing.
2 dwg, 2 tbl, 1 ex
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Authors
Dates
2017-11-14—Published
2016-11-29—Filed