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(19)

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2 520 171

(13)

(51)

IPC

C23C16/24(2006-01-01)

B22F3/26(2006-01-01)

(21) (22)

Application

2012144877/02, 2012-10-22

(24)

Start date

2012-10-22

(22)

Actual filing date

2012-10-22

(45)

Published

2014-06-20

(72)

Inventor

Bushuev Vjacheslav MaksimovichBushuev Maksim VjacheslavovichFal'Kovich Andrej NikolaevichObolenskij Dmitrij SergeevichNekrasov Vadim Aleksandrovich

(73)

Holder

Otkrytoe Aktsionernoe Obshchestvo Nauchno-Issledovatel'Skij Institut Kompozitsionnykh Materialov"

ADJUSTMENT OF PENETRATION OF BUTTS BETWEEN RETORT PARTS IN SILICONISING TOOL SET Russian patent published in 2014 - IPC C23C16/24 B22F3/26

Abstract RU 2520171 C1

FIELD: metallurgy.

SUBSTANCE: fusible gate is formed between retort parts of siliconising plant at butts on the side of its outer surface. Said fusible gate is formed in end recess while fusible gate material is composed by Si₃N₄-Si or Ti₃SiC₅-Ti Si₂-Si, or TiSi₂-Si.Said materials are produced by impregnating them or Si₃N₄-or mix of TiC and Ti, or Ti-based porous blanks formed at circular recess bottom to overlap the butt with the melt of silicon melt or its alloys with Cu and Al.

EFFECT: higher degree and homogeneity of siliconising, longer life.

6 cl, 6 dwg

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RU 2 520 171 C1

Authors

Bushuev Vjacheslav Maksimovich

Bushuev Maksim Vjacheslavovich

Fal'Kovich Andrej Nikolaevich

Obolenskij Dmitrij Sergeevich

Nekrasov Vadim Aleksandrovich

Dates

2014-06-20—Published

2012-10-22—Filed