FIELD: chemistry.
SUBSTANCE: silicon carbide is obtained by displacement of a carbon foil tape in a horizontal plane with supply to its surface of melted silicon, the process being performed in dynamic vacuum, rate of displacement being specified within the range of 0.5-3.0 m/min, which results in formation of microcrystals of semiconductor silicon carbide of a cubical structure in the form of a self-bound layer. The said crystals are bound with thin interlayers of excessive silicon, supplied from a feeder. After extraction of the tape with the grown layer, it is cut into measured strips, which are placed in furnaces and heated in air to a temperature of 1050°C for 8 hours.
EFFECT: substrate from the carbon foil is removed, and silicon interlayers, binding SiC crystals are converted into its dioxide, mutually insulating the said crystals electrically, which makes it possible to use such material at higher temperatures.
2 dwg, 7 ex
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF PRODUCING NANOCRISTALLIC MOISSANITE | 2019 |
|
RU2714344C1 |
| METHOD FOR PREPARING SILICONE CARBIDE PLATES | 2013 |
|
RU2540668C1 |
| METHOD FOR OBTAINING GEM STONES | 2023 |
|
RU2808301C1 |
| MANUFACTURING METHOD OF FUNCTIONAL ELEMENT OF SEMICONDUCTOR DEVICE | 2019 |
|
RU2727557C1 |
| ARTICLE CONTAINING A SILICON BASE AND A COATING LAYER IN THE FORM OF A NANOFILM OF CARBON WITH A DIAMOND-TYPE CRYSTAL LATTICE, AND A METHOD OF MAKING SAID ARTICLE | 2019 |
|
RU2715472C1 |
| MATERIAL HAVING MULTILAYER STRUCTURE AND INTENDED FOR CONTACT WITH LIQUID SILICON | 2009 |
|
RU2494999C2 |
| METHOD FOR PRODUCING PLATES OF GALLIUM NITRIDE OF SODIUM CRYSTAL | 2018 |
|
RU2683103C1 |
| LAYERED SUBSTRATE MADE OF SEMICONDUCTOR COMPOUND, ITS MANUFACTURING METHOD AND SEMICONDUCTOR ELEMENT | 2018 |
|
RU2753180C2 |
| METHOD OF EPITAXIAL GROWING OF SINGLE CRYSTAL LAYERS OF CUBIC SIC | 0 |
|
SU1710604A1 |
| METHOD FOR PREPARING NANODIAMONDS WITH METHANE PYROLYSIS IN ELECTRIC FIELD | 2012 |
|
RU2521581C2 |
