LAYERED SUBSTRATE MADE OF SEMICONDUCTOR COMPOUND, ITS MANUFACTURING METHOD AND SEMICONDUCTOR ELEMENT Russian patent published in 2021 - IPC H01L21/02 

Abstract RU 2753180 C2

FIELD: semiconductors.

SUBSTANCE: layered substrate made of a semiconductor compound is proposed, containing two directly connected together and layered monocrystal substrates made of a semiconductor compound having the same composition, including A and B as constituent elements, and having the same arrangement of atoms. According to the invention, the front and back surfaces of the layered substrate are polar faces containing the same type of atoms from A or B, and the layer boundary contains a bond of atoms of B or A, and it is a plane of a unipolar antiphase boundary of an area, in which crystal lattices of atoms coincide.

EFFECT: polar faces of the front and back surfaces of the layered substrate made of the semiconductor compound are made monopolar, thereby contributing to the technological process of manufacturing the semiconductor element and making it possible to manufacture a high-quality and stable semiconductor element of low cost without implementing complex substrate processing.

15 cl, 12 dwg, 1 tbl

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RU 2 753 180 C2

Authors

Nagasawa Hiroyuki

Kubota Yoshihiro

Akiyama Shoji

Dates

2021-08-12Published

2018-02-15Filed