FIELD: chemistry.
SUBSTANCE: method involves advancing a carbon foil tape in the horizontal plane in relation to a capillary feeder containing fused silicone in the vacuum environment at a discharge of 10-1 torr with air supply into the chamber to achieve a pressure of 10 torr; a tape advancement rate is specified within the range of 0.5-3.0 m/min; the prepared tape is removed from the chamber, re-wound with changing a layer orientation of the produced crystals SiC top down; the process is repeated at an air-free discharge of 10-1 torr with at a tape advancement rate of 9 cm/min; a free-silicone phase is removed from the produced plates by dissolving in mixed hydrofluoric and nitric acids.
EFFECT: forming a self-binding layer of cubic semiconductor silicon carbide SiC on the surface of flexible carbon foil, which can be additionally impregnated with melted silicone to maintain the uniformity and mechanical strength of the composite.
5 ex
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