MICROELECTROMECHANICAL FUSE Russian patent published in 2014 - IPC F42C1/00 

Abstract RU 2522323 C1

FIELD: blasting operations.

SUBSTANCE: microelectromechanical structure is formed of successively and coaxially located crystal silicon, in which a cantilever-needle is formed, the crystal of silicon with doped hydrogen and oxidant with the area of the porous layer with the thickness of up to 50 mcm, the heat conducting element - the crystal of monocrystalline silicon and the silicon crystal with the area of the porous layer with the thickness of not less than 60 mcm mounted on a glass substrate having a hole in the central part. The cantilever-needle faces the porous layer of the silicon crystal with the area of the porous layer with the thickness up to 50 mcm. The coefficient of thermal conductivity of the heat conducting element is greater than the thermal conductivity of the silicon crystal with the area of the porous layer with the thickness of not less than 60 mcm. The structure is fixed on the frame integrated in the housing in which vacuum is created.

EFFECT: increased efficiency of the fuse and ensuring controlled explosion.

1 dwg

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RU 2 522 323 C1

Authors

Borzov Andrej Borisovich

Likhoedenko Konstantin Pavlovich

Tsygankov Viktor Jur'Evich

Apresjan Arsen Manvelovich

Dates

2014-07-10Published

2012-12-29Filed