METHOD OF MAKING MICRO-ELECTROMECHANICAL STRUCTURES AND APPARATUS FOR REALISING SAID METHOD Russian patent published in 2014 - IPC H01L21/02 B81C1/00 

Abstract RU 2511282 C1

FIELD: physics.

SUBSTANCE: invention relates to instrument-making and can be used in making semiconductor micro-electromechanical devices and specifically miniature sensors of physical quantities. In the method of making micro-electromechanical structures via anodic connection (anodic welding) of a two-layer structure of a silicon plate with a cleaned glass substrate while heating in a vacuum and applying voltage, the silicon plate is first divided into crystals; pairs of silicon-glass structures are formed and placed vertically in a plate holder while being pressed to each other; the plate holder is placed in a graphite heater and heated to temperature ranging from 370°C to 400°C, after which anode voltage is applied across the glass in a range from 200 V to 500 V to form a space-charge layer in the glass adjoining the surface of the silicon. In the apparatus for making micro-electromechanical structures, a graphite table is made with sidewalls in which, like in the base of the graphite table, there are at least two heating elements in each; at the ends of two opposite walls there are current leads for applying anode voltage; at the base of the table there is a plate holder in which pairs of silicon-glass structures are placed.

EFFECT: invention increases the number of non-defective micro-electromechanical structures by improving the electrostatic anodic seeding method.

3 cl, 4 dwg

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Authors

Tsivinskij Aleksandr Viktorovich

Tsivinskaja Tat'Jana Anatol'Evna

Tsygankov Viktor Jur'Evich

Tinjakov Jurij Nikolaevich

Mileshin Sergej Andreevich

Andreev Konstantin Aleksandrovich

Borzov Andrej Borisovich

Likhoedenko Konstantin Pavlovich

Dates

2014-04-10Published

2012-10-31Filed