METHOD OF BIDIRECTIONAL SWITCH CONTROL IN THREE-LEVEL SEMICONDUCTOR RECTIFIER Russian patent published in 2014 - IPC H02M1/84 

Abstract RU 2523042 C2

FIELD: electricity.

SUBSTANCE: rectangular voltage pulse is generated, with middles of generated rectangular pulses synchronised with phase voltage of power supply network by moments of voltage transition over zero, effective value of first harmonic of rectifier phase current is measured, angle δ is calculated by expression , where ω is circular frequency of phase voltage of power supply network; L is phase inductance of rectifier; I1 is effective value of first harmonic in input phase current of rectifier; U1 is effective value of first harmonic in phase voltage of power supply network, generated rectangular pulses are phase-shifted back by δ angle, then fed to control inputs of bidirectional switches of three-phase three-level semiconductor rectifier.

EFFECT: possible formation of unity rate for rectifier phase current shift against first harmonic voltage upon change of given current value.

3 dwg

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RU 2 523 042 C2

Authors

Brovanov Sergej Viktorovich

Dates

2014-07-20Published

2012-10-19Filed