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2 527 188

(13)

(51)

IPC

G11C19/28(2006-01-01)

(21) (22)

Application

2013120615/08, 2013-05-06

(24)

Start date

2013-05-06

(22)

Actual filing date

2013-05-06

(45)

Published

2014-08-27

(72)

Inventor

Dem'Janenko Mikhail AlekseevichEsaev Dmitrij GeorgievichKozlov Aleksandr IvanovichMarchishin Igor' VladimirovichOvsjuk Viktor NikolaevichFilippova Valerija Viktorovna

(73)

Holder

Federal'Noe Gosudarstvennoe Bjudzhetnoe Uchrezhdenie Nauki Institut Fiziki Poluprovodnikov Im. A.V. Rzhanova Sibirskogo Otdelenija Rossijskoj Akademii Nauk So Ran)

SHIFT REGISTER Russian patent published in 2014 - IPC G11C19/28

Abstract RU 2527188 C1

FIELD: electricity.

SUBSTANCE: device contains cells, each of them consisting of two switching and informative p-channel MOS transistors load control p-channel MOS transistor, load p-channel MOS transistor, varactor diode, SCLs, zero potential bus and two additional load control p-channel MOS transistors in an odd cell or the second varactor diode in an even cell.

EFFECT: provision of bidirectional data transfer and minimisation of space required for LSI chip.

3 dwg

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RU 2 527 188 C1

Authors

Dem'Janenko Mikhail Alekseevich

Esaev Dmitrij Georgievich

Kozlov Aleksandr Ivanovich

Marchishin Igor' Vladimirovich

Ovsjuk Viktor Nikolaevich

Filippova Valerija Viktorovna

Dates

2014-08-27—Published

2013-05-06—Filed